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Volumn 2, Issue , 1997, Pages
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The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization
a
a
MIE UNIVERSITY
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION;
CRYSTAL LATTICES;
DEGRADATION;
DISLOCATIONS (CRYSTALS);
GALLIUM NITRIDE;
INTERFACES (MATERIALS);
LIGHT EMITTING DIODES;
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
TRANSMISSION ELECTRON MICROSCOPY;
CRYSTAL QUALITY;
EDGE DISLOCATIONS;
FILM THICKNESS;
LATTICE MISMATCH;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 4043135857
PISSN: 10925783
EISSN: None
Source Type: Journal
DOI: 10.1557/s1092578300001320 Document Type: Article |
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Times cited : (69)
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References (9)
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