A novel passivation technique of GaAs power MESFETs

Applied Surface Science

Volumn 56-58, Issue PART 2, 1992, Pages 827-831

  Taniguchi, M ^a   Murakawa, T ^a   Kajitani, Y ^a  

^a Innovative Materials Development Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE COMPOUNDS--APPLICATIONS; PLASMAS--PRODUCTION; SEMICONDUCTING GALLIUM ARSENIDE--SURFACE TREATMENT; SURFACE TREATMENT--PASSIVATION;

CARBON TETRAFLUORIDE PLASMA TREATMENT; GAAS POWER MESFET FABRICATION; GALLIUM ARSENIDE SURFACE PASSIVATION; MESFET PASSIVATION LAYERS; X-RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026835368     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(92)90345-X     Document Type: Article

References (8)

1. Change of g/sub m/(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs
2. Analysis of surface-induced degradation of GaAs power MESFET's
3. The oxidation of GaAs(110): A reevaluation
4. Surface potential effect on gate—Drain avalanche breakdown in GaAs MESFET's
5. Silicon Schottky Barrier Diode with Near-Ideal I-V Characteristics