I-AlGaAs/n-GaAs doped-channel heterostructure insulated gate FET (DC-HIGFET) with n+-GaAs selectively grown by MOCVD

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1988, Pages 692-695

  Takatani, Shinichiro ^a   Shigeta, Junji ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; INTEGRATED CIRCUITS, LSI; MICROSCOPIC EXAMINATION--TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS--CHEMICAL VAPOR DEPOSITION;

DOPED CHANNEL HIGFET; MOCVD SELECTIVE GROWTH;

TRANSISTORS, FIELD EFFECT;

EID: 0024174481     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)