Can GaAs ICs achieve Si VLSI reliability?

GaAs IC Symposium Technical Digest 1992

Volumn , Issue , 1992, Pages 149-152

  MacWilliams, Kenneth P ^a   Janousek, Bruce K ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE MODES; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; TIMING CIRCUITS; VLSI CIRCUITS;

CHIP RELIABILITY; IC TECHNOLOGY; INTEGRATION LEVELS; MINIMUM FEATURE SIZES; SI TECHNOLOGY;

SILICON;

EID: 85067396013     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GAAS.1992.247203     Document Type: Conference Paper

References (10)

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4. R. Mozzami, et al, "Temperature acceleration of time-dependent breakdown," IEEE Trans Elect Devices, Vol.36, 11, p.2462, 1989.
5. B. Prince, R.H.W. Salters, "ICs going on a 3-V diet," IEEE Spectrum, p.22, May 1992.
6. J.C. Blair, et al, "Electromigration-induced failures in aluminum film conductors," Appl Phys Letters, Vol.19, p.281, 1970.
7. T. Turner and K. Wendel, "The influence of stress on aluminum conductor life," Proc of the Intern Reliab Phys Symp, p. 142, 1985.
8. W.J. Roesch, et al, "Lifetesting GaAs MMICs under RF stimulus," Proc of Micro Millimeter-wave Ckts Symp, June 1992.
9. A. Wantanabe, et al, "Rapid degradation of WSi self-aligned gate GaAs MESFETs by hot-carrier effect," Proc IRPS, p.127, 1992.
10. J.S. Suehle, et al, "Current density-dependence of electromigration due to pulse operation," Proc IRPS, p.106, 1990.