Determination of defect types of ZnSe-based epilayers by etch-pit configurations

Journal of Crystal Growth

Volumn 181, Issue 4, 1997, Pages 343-350

  Hong, S K ^a   Kim, B J ^a   Kim, M D ^a   Park, G S ^a   Lee, J H ^a   Park, H S ^a   Yoon, S Y ^a   Kim, T I ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Etch pit; Stacking fault; TEM; Threading dislocation; ZnSe

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

ETCH PIT CONFIGURATIONS; FRANK TYPE STACKING FAULTS; SHOCKLEY TYPE STACKING FAULTS; THREADING DISLOCATIONS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031549699     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00302-3     Document Type: Article

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