Self-organized quantum wires and dots: New opportunities for device applications

Progress in Crystal Growth and Characterization of Materials

Volumn 35, Issue 2-4, 1997, Pages 289-305

  Ledentsov, N N ^a,b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHASE SEPARATION; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; STRAIN;

LATTICE MISMATCH; SELF ORGANIZATION EFFECTS; SPONTANEOUS PERIODIC NANOFACETING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031368247     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0960-8974(97)00033-8     Document Type: Review

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