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Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 465-477

Real-time analysis of III-V-semiconductor epitaxial growth

(2) Richter, W a Zettler, J T a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; POLARIZATION; REAL TIME SYSTEMS; SEMICONDUCTOR GROWTH; SPECTROSCOPY; STOICHIOMETRY; SURFACES; THICKNESS CONTROL;

GROWTH DYNAMICS; REFLECTANCE ANISOTROPY SPECTROSCOPY; SEMICONDUCTOR EPITAXIAL GROWTH; SPECTROSCOPIC ELLIPSOMETRY;

EPITAXIAL GROWTH;

EID: 0030564341 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00321-2 Document Type: Article

Times cited : (77)

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