Vertical microcavity lasers with InGaAs/GaAs quantum dots formed by spinodal phase separation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 3 B, 1997, Pages

  Schur, Richard ^a   Sogawa, Fumihiro ^a   Nishioka, Masao ^a   Ishida, Satomi ^a   Arakawa, Yasuhiko ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

EXCITATION DENSITIES; LASING OSCILLATIONS; OPTICAL TRANSITIONS; SPINODAL PHASE SEPARATION; VERTICAL MICROCAVITY LASER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031096851     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l357     Document Type: Article

References (15)