Lifetime Reliability of Thin-Film SOI NMOSFET's

IEEE Electron Device Letters

Volumn 16, Issue 9, 1995, Pages 387-389

  Woo, J ^a   Wang Ratkovic, J ^a   Huang, W M ^b   Hwang, B Y ^b   Racanelli, M ^b   Foerstner, J ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC BREAKDOWN; HOT CARRIERS; OXYGEN; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; STRESSES; SUBSTRATES; THIN FILM TRANSISTORS;

DRAIN STRESS; HOT-CARRIER DEGRADATION; HOT-CARRIER STRESSING; LIFETIME RELIABILITY;

MOSFET DEVICES;

EID: 0029379016     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.406797     Document Type: Article

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