Hot-carrier effects in fully-depleted SOI nMOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 349-352

  Su, L T ^a   Fang, Hao ^a   Chung, J E ^a   Antoniadis, D A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC BREAKDOWN; ELECTRONS; HOT ELECTRONS; METALLIC FILMS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

DEGRADATION MECHANISM; DEVICE LIFETIME; FULLY DEPLETED SOI; HOT CARRIER EFFECT; HOT-ELECTRON DEGRADATIONS; PARTIALLY DEPLETED; SILICON FILM THICKNESS; SUBSTRATE DOPING;

MOSFET DEVICES;

EID: 85027184032     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307376     Document Type: Conference Paper

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