Charge accumulation and mobility in thin dielectric MOS transistors

Solid State Electronics

Volumn 25, Issue 9, 1982, Pages 833-841

  Sodini, C G ^a   Ekstedt, T W ^a   Moll, J L ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

TRANSISTORS;

EID: 0020186076     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(82)90170-8     Document Type: Article

References (9)

1. Design of ion-implanted MOSFET's with very small physical dimensions
2. Charge Accumulation and Mobility in Thin Gate MIS Devices
3. Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's
4. Concerning the onset of heavy inversion in MIS devices
5. Characterization of the electron mobility in the inverted〈100〉 Si surface
6. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
7. 2-Si interface