A Unified Current-Voltage Model for Long-Channel nMOSFET’s

IEEE Transactions on Electron Devices

Volumn 38, Issue 2, 1991, Pages 399-406

  Park, Chan Kwang ^a   Lee, Chang Yeol ^a   Lee, Kwyro ^a   Moon, Byung Jong ^b   Hee Byun, Young ^c   Shur, Michael ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b UNIVERSITY OF MINNESOTA   (United States)

^c UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON COMPOUNDS--APPLICATIONS; SEMICONDUCTING SILICON--APPLICATIONS;

CONTINUOUS I-V MODEL; LONG CHANNEL N-MOSFET'S; THRESHOLD VOLTAGE; UNIFIED CHARGE CONTROL MODEL (UCCM); UNIFIED CURRENT-VOLTAGE MODEL; UNIVERSAL MOBILITY MODEL;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026103849     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.69923     Document Type: Article

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