Degradation mechanism in carbon-doped GaAs minority-carrier injection devices

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1996-2001

  Fushimi, Hiroshi ^a   Wada, Kazumi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; HYDROGEN; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

HYDROGEN DONORS INDUCE RAPID DEGRADATION; MINORITY CARRIER INJECTION DEVICES; RECOMBINATION ENHANCED DEFECT REACTION (REDR);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031274403     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641371     Document Type: Article

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