Characterization of Current-Induced Degradation in Be-Doped HBT's Based in GaAs and InP

IEEE Transactions on Electron Devices

Volumn 40, Issue 7, 1993, Pages 1194-1201

  Tanaka, Shin Ichi ^a   Shimawaki, Hidenori ^a   Kasahara, Kensuke ^a   Honjo, Kazuhiko ^b  

^a PURDUE UNIVERSITY   (United States)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; DEGRADATION; ELECTRONIC PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

BASE CURRENT; BIASING; COLLECTOR CURRENT; HETEROJUNCTION BIPOLAR TRANSISTORS; STRESS CURRENT;

BIPOLAR TRANSISTORS;

EID: 0027625334     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.216421     Document Type: Article

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