Effect of base dopant species on heterojunction bipolar transistor reliability

Materials Science and Engineering B

Volumn 28, Issue 1-3, 1994, Pages 232-237

  Abernathy, C R ^a   Ren, F ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Base doping; Gallium arsenide; Heterojunction bipolar transistors

Indexed keywords

ANNEALING; CARBON; CURRENT DENSITY; DEGRADATION; DOPING (ADDITIVES); HETEROJUNCTIONS; HYDROGEN; MOLECULAR BEAM EPITAXY; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BASE DOPING; CALCIUM DOPED DEVICES; DOPANT EFFECTS; ELECTRIC ACTIVATION; GAIN REDUCTION; HETEROJUNCTION BIPOLAR TRANSISTOR; HIGH DOPING LEVEL; HOLE CONCENTRATION; METALLORGANIC MOLECULAR BEAM EPITAXY;

BIPOLAR TRANSISTORS;

EID: 0028699420     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(94)90054-X     Document Type: Article

References (30)

1. Degradation mechanism of Ti/Au and Ti/Pd/Au gate metallizations in GaAs MESFET's
2. Reliability of power GaAs field-effect transistors
3. Physical and materials limitations on burnout voltage of GaAs power MESFET's
4. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
5. ICCBE-4
6. Donor neutralization in GaAs after plasma silicon nitride deposition