Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Materials Science and Engineering B

Volumn 28, Issue 1-3, 1994, Pages 257-260

  Ishibashi, T ^a   Sugahara, H ^a   Ito, H ^a   Nittono, T ^a   Nagata, K ^a   Nakajima, O ^a   Nagano, J ^a   Ogawa, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Gallium arsenide; p n Junctions; Surface stress

Indexed keywords

CARBON; DEGRADATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; HETEROJUNCTIONS; MECHANICAL TESTING; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SERVICE LIFE; SILICON NITRIDE; STRESSES;

CURRENT GAIN DETERIORATION; DEGRADATION MODE; HETEROJUNCTION BIPOLAR TRANSISTOR; HIGH TEMPERATURE BIAS STRESS TEST; MECHANICAL STRESS; P N JUNCTIONS;

BIPOLAR TRANSISTORS;

EID: 0028728470     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(94)90059-0     Document Type: Article

References (3)

1. MTT-S Digest
2. Tech. Dig. GaAs IC Symp.