Current induced degradation of Be-doped AlGaAs/GaAs HBT's and its suppression by Zn diffusion into extrinsic base layer

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 673-676

  Nakajima, O ^a   Ito, H ^a   Nittono, T ^a   Nagata, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; ZINC AND ALLOYS--DIFFUSION;

CURRENT INDUCED DEGRADATION;

TRANSISTORS, BIPOLAR;

EID: 0025577022     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)