메뉴 건너뛰기




Volumn 43, Issue 5, 1991, Pages 4361-4372

Boron reactivation kinetics in hydrogenated silicon after annealing in the dark or under illumination

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001701268     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.43.4361     Document Type: Article
Times cited : (67)

References (58)
  • 2
    • 84926579912 scopus 로고    scopus 로고
    • Hydrogen in Semiconductors, edited by J. I. Pankove and M. N. Johnson, Vol. 34 of Semiconductors and Semimetals (Academic, New York, in press).
  • 29
    • 84926543686 scopus 로고    scopus 로고
    • R. N. Hall, in Proceedings of the Thirteenth International Conference on Defects in Semiconductors, edited by L. C. Kimerling and J. M. Parsey Jr. (Metallurgical Society, American Institute of Mechnical Engineers, Wavendale, PA, 1985), Vol. 14a, p. 759.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.