Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors

Applied Physics Letters

Volumn 59, Issue 27, 1991, Pages 3613-3615

  Ren, F ^a   Fullowan, T R ^a   Lothian, J ^a   Wisk, P W ^a   Abernathy, C R ^a   Kopf, R F ^a   Emerson, A B ^a   Downey, S W ^a   Pearton, S J ^a  

^a LUCENT TECHNOLOGIES   (United States)

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EID: 36449002570     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.105623     Document Type: Article

References (11)