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Applied Physics Letters
Volumn 59, Issue 4, 1991, Pages 434-436
Annealing effect on the electrical properties of heavily C-doped p +GaAs
(2)
Watanabe, Kazuo
a
Yamazaki, Hajime
a
a
NTT CORPORATION
(
Japan
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
0001439695
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.105454
Document Type
:
Article
Times cited : (
41
)
References (
15
)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
