Recessed-Channel Structure for Fabricating Ultrathin SOI MOSFET with Low Series Resistance

IEEE Electron Device Letters

Volumn 15, Issue 1, 1994, Pages 22-24

  Chan, Mansun ^a   Assaderaghi, Fariborz ^a   Hu, Chenming ^a   Ko, Ping K ^a   Parke, Stephen A ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); OXIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

LOW SERIES RESISTANCE; RCSOI TECHNOLOGY; RECESSED-CHANNEL STRUCTURE; SATURATION DRAIN CURRENT; SILICON FILMS; ULTRATHIN SILICON ON INSULATOR FILM;

MOSFET DEVICES;

EID: 0028257321     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.289474     Document Type: Article

References (10)

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