Simplified Analysis of Body-Contact Effect for MOSFET/SOI

IEEE Transactions on Electron Devices

Volumn 35, Issue 8, 1988, Pages 1391-1393

  Omura, Yasuhisa ^a   Izumi, Katsutoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, FIELD EFFECT -- MEASUREMENTS;

BODY-CONTACT EFFECT; DRAIN CURRENT REDUCTION; MOSFET/SOI;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024057443     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2567     Document Type: Article

References (3)

1. J. Tihanyl and H. Schlotterer, “Influence of the floating substrate potential on the characteristics of ESFI MOS transistors,” Solid-State Electron., vol. 18, pp. 309-314, 1975.
2. K. Izumi, Y. Omura, M. Ishikawa, and E. Sano, “SIMOX technology for CMOS LSI’s,” in Symp. VLSI Technol. Tech. Dig., pp. 10-11, 1982.
3. Y. Omura and K. Izumi, “Body contact design for MOSFET/SI MOX,” in Ann. Meeting IECE Japan Tech. Dig. (Tokyo), pp. 2-301, 1987.