Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

Journal of the Electrochemical Society

Volumn 144, Issue 8, 1997, Pages 2872-2881

  Brown, R A ^a   Kononchuk, O ^a,c   Bondarenko, I ^a,c   Romanowski, A ^a   Radzimski, Z ^a   Rozgonyi, G A ^a,c   Gonzalez, F ^b,c  

^a North Carolina State University   (United States)

^b MICRON TECHNOLOGY INC   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

FLOAT ZONE METHOD; MEGAELECTRON VOLT (MEV) SELF IMPLANTATION; METALLIC IMPURITY GETTERING; SCANNING ELECTRON BEAM INDUCED CURRENT MICROSCOPY;

SILICON WAFERS;

EID: 0031210375     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837910     Document Type: Article

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