SCOPUS 정보 검색 플랫폼

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 260-264

EBIC study of recombination activity of oxygen precipitation related defects in Si

(3) Seifert, W b Kittler, M b Vanhellemont, J a

a IMEC (Belgium)

b IHP (Germany)

Author keywords

Oxygen precipitates; Recombination sites; Silicon

Indexed keywords

ACTIVATION ENERGY; COMPOSITION EFFECTS; CONTAMINATION; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; ELECTRON BEAMS; INDUCED CURRENTS; OXYGEN; PRECIPITATION (CHEMICAL);

ELECTRON BEAM INDUCED CURRENT (EBIC) TECHNIQUE; MINORITY CARRIER DIFFUSION LENGTH; OXYGEN PRECIPITATION RELATED DEFECTS (ORD);

SEMICONDUCTING SILICON;

EID: 0004857188 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01718-7 Document Type: Article

Times cited : (33)

References (12)

1
- 0001673843
- T.S. Moss and S. Mahajan (eds.), Elsevier, New York
- H. Bender and J. Vanhellemont, in T.S. Moss and S. Mahajan (eds.), Handbook on Semiconductors, Vol. 3, Elsevier, New York, 1994, p. 1637.
- (1994) Handbook on Semiconductors , vol.3 , pp. 1637
- Bender, H.¹ Vanhellemont, J.²

2
- 0001597898
- J.M. Hwang and D.K. Schroder, J. Appl. Phys., 59 (1986) 2476.
- (1986) J. Appl. Phys , vol.59 , pp. 2476
- Hwang, J.M.¹ Schroder, D.K.²

3
- 5544264726
- P.R. Wilshaw, T.S. Fell and M.D. Coteau, J. Physique IV, 1 (1991) C6-3.
- (1991) J. Physique IV , vol.1
- Wilshaw, P.R.¹ Fell, T.S.² Coteau, M.D.³

4
- 36448999240
- M. Kittler, C. Ulhaq-Bouillet and V. Higgs, J. Appl. Phys., 78 (1995) 4573.
- (1995) J. Appl. Phys. , vol.78 , pp. 4573
- Kittler, M.¹ Ulhaq-Bouillet, C.² Higgs, V.³

5
- 0001069530
- B. Shen, T. Sekiguchi, J. Jablonski and K. Sumino, J. Appl. Phys., 76 (1994) 4540.
- (1994) J. Appl. Phys. , vol.76 , pp. 4540
- Shen, B.¹ Sekiguchi, T.² Jablonski, J.³ Sumino, K.⁴

6
- 0000283961
- J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny and C. Claeys, J. Appl. Phys., 77 (1995) 5669; J. Vanhellemont, A. Kaniava, M. Libezny, E. Simoen, G. Kissinger, E. Gaubas, C. Claeys and P. Clauws, MRS Symp. Proc., 378 (1995) 35.
- (1995) J. Appl. Phys. , vol.77 , pp. 5669
- Vanhellemont, J.¹ Simoen, E.² Kaniava, A.³ Libezny, M.⁴ Claeys, C.⁵

7
- 0029541957
- J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny and C. Claeys, J. Appl. Phys., 77 (1995) 5669; J. Vanhellemont, A. Kaniava, M. Libezny, E. Simoen, G. Kissinger, E. Gaubas, C. Claeys and P. Clauws, MRS Symp. Proc., 378 (1995) 35.
- (1995) MRS Symp. Proc. , vol.378 , pp. 35
- Vanhellemont, J.¹ Kaniava, A.² Libezny, M.³ Simoen, E.⁴ Kissinger, G.⁵ Gaubas, E.⁶ Claeys, C.⁷ Clauws, P.⁸

8
- 0043115331
- M. Kittler, J. Lärz, G. Morgenstern and W. Seifert, J. Phys. IV, 1 (1991) C6-173.
- (1991) J. Phys. IV , vol.1 , pp. 6-173
- Kittler, M.¹ Lärz, J.² Morgenstern, G.³ Seifert, W.⁴

9
- 17544383705
- W. Seifert, M. Kittler, M. Seibt and A. Buczkowski, Solid-State Phenomena, 47-48 (1996) 365.
- (1996) Solid-state Phenomena , vol.47-48 , pp. 365
- Seifert, W.¹ Kittler, M.² Seibt, M.³ Buczkowski, A.⁴

10
- 0028424713
- M. Kittler and W. Seifert, Mater. Sci. Eng., B24 (1994) 78.
- (1994) Mater. Sci. Eng. , vol.B24 , pp. 78
- Kittler, M.¹ Seifert, W.²

11
- 0001494681
- W. Seifert, M. Kittler, J. Vanhellemont, E. Simoen, C. Claeys and F.G. Kirscht, Inst. Phys. Conf. Ser., 149 (1996) 319.
- (1996) Inst. Phys. Conf. Ser. , vol.149 , pp. 319
- Seifert, W.¹ Kittler, M.² Vanhellemont, J.³ Simoen, E.⁴ Claeys, C.⁵ Kirscht, F.G.⁶

12
- 0029546310
- H. Daio, K. Yakushiji, A. Buczkowski and F. Shimura, Mater. Sci. Forum, 196-201 (1995) 1817.
- (1995) Mater. Sci. Forum , vol.196-201 , pp. 1817
- Daio, H.¹ Yakushiji, K.² Buczkowski, A.³ Shimura, F.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.