The mechanisms of iron gettering in silicon by boron ion-implantation

Journal of the Electrochemical Society

Volumn 143, Issue 4, 1996, Pages 1406-1409

  Benton, J L ^a   Stolk, P A ^a   Eaglesham, D J ^a   Jacobson, D C ^a   Cheng, J Y ^a   Poate, J M ^a   Myers, S M ^b   Haynes, T E ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARBON; DEEP LEVEL TRANSIENT SPECTROSCOPY; FERMI LEVEL; IRON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SOLUBILITY;

IMPLANTATION DAMAGE; IRON GETTERING; NEUTRAL IMPURITY; TRAPPING;

ION IMPLANTATION;

EID: 0030126975     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836651     Document Type: Article

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