Iron precipitation at oxygen related bulk defects in Czochralski silicon

Journal of Applied Physics

Volumn 79, Issue 8, 1996, Pages 4450-4452

  Wijaranakula, W ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042924695     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361755     Document Type: Article

References (16)

1. K. Graff and H. Pieper, J. Electrochem. Soc. 128, 669 (1981).
2. K. Wanstel and P. Wagner, Appl. Phys. A 27, 207 (1982).
3. A. Ohsawa, K. Honda, R. Takizawa, T. Nakanishi, M. Aoki, and N. Toyokura, in Semiconductor Silicon 1990, edited by H. R. Huff, K. G. Barraclough, and J. Chikawa (Electrochem. Soc. Proc., Pennington, NJ, 1990), Vol. 90-7, pp. 601-613.
4. W. B. Henley, L. Jastrzeski, and N. F. Haddad, in Defect Engineering in Semiconductor Growth, Processing and Device Technology, edited by S. Askok, J. Chevallier, K. Sumino, and E. Weber [Mater. Res. Soc. Symp. Proc. 262, 993 (1992)].
5. P. W. Mertens, M. Meuris, H. F. Schmidt, S. Verhaverbeke, M. M. Heyns, P. Carr, D. Gräf, A. Schnegg, M. Kubota, K. Dillenbeck, and R. de Blank, in Crystalline Defects and Contamination: Their Impact and Control in Devie Manufacturing, edited by B. O. Kolbesen, P. Stallhofer, C. Claeys, and F. Tardif (Electrochem. Soc. Proc., Pennington, NJ, 1993), Vol. 93-15, pp. 87-102.
6. M. S. Goorsky, J. Lagowski, and H. C. Gatos, J. Appl. Phys. 64, 6716 (1988).
7. D. Gilles, E. R. Weber, S. Hahn, O. R. Monteiro, and K. Cho, in Ref. 3, pp. 697-708.
8. M. Aoki, A. Hara, and A. Ohsawa, J. Appl. Phys. 72, 895 (1992).
9. W. Wijaranakula, J. Appl. Phys. 72, 2713 (1992).
10. W. Wijaranakula, X. Gao, K. Curtis, and H. Haddad, in Defect and Impurity Engineered Semiconductors and Devices, edited by S. Askok, J. Chevallier, I. Akasaki, and N. M. Johnson [Mater. Res. Soc. Symp. Proc. 378, 309 (1992)].
11. E. R. Weber, Appl. Phys. A 30, 1 (1983).
12. D. Gilles, W. Schröter, and W. Bergholz, Phys. Rev. B 41, 5770 (1990).
13. M.-A. Nicolet and S. S. Lau, in VLSI Electronics: Microstructural Sciences, edited by Norman G. Einspruch (Academic, Boston, 1983), Vol. 6, pp. 329-464.
14. M. Seibt and K. Graff, J. Appl. Phys. 63, 444 (1988).
15. R. Falster, Z. Laczik, G. R. Booker, A. R. Bhatti, and P. Török, in Ref. 4, p. 945.
16. H. Ewe, D. Gilles, S. Hahn, M. Seibt, and W. Schröter, in Semiconductor Silicon 1994, edited by H. R. Huff, W. Bergholz, and K. Sumino (The Electrochemical Society, Pennington, NJ, 1994), Vol. 94-10, p. 796.