Effects of channel mobility on SiC power metal-oxide-semiconductor field effect transistor performance

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. A, 1996, Pages 3331-3333

  Kobayashi, Sota ^a,b   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Channel mobility; On resistance; Power MOSFET; Silicon carbide

Indexed keywords

ANISOTROPY; CALCULATIONS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; GEOMETRY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SUBSTRATES;

CHANNEL RESISTANCE; GATE CAPACITANCE; GATE VOLTAGE; JUNCTION FIELD EFFECT TRANSISTOR; MOBILITY ANISOTROPY;

MOSFET DEVICES;

EID: 0030173542     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3331     Document Type: Article

References (13)

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