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Volumn 350, Issue 1-3, 1996, Pages 247-253
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Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy
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Author keywords
Scanning tunneling microscopy; Silicon carbide; Stepped single crystal surfaces; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DIFFUSION;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
RELAXATION PROCESSES;
SCANNING TUNNELING MICROSCOPY;
SILICON CARBIDE;
SILICON WAFERS;
SINGLE CRYSTALS;
SURFACE ROUGHNESS;
SURFACE STRUCTURE;
SURFACES;
ADATOMS;
STEP BUNCHING;
STEP CONFIGURATION;
STEPPED SINGLE CRYSTAL SURFACES;
SURFACE RECONSTRUCTION;
TOPOGRAPHY;
VICINAL SURFACES;
THIN FILMS;
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EID: 0030126915
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(95)01105-6 Document Type: Article |
Times cited : (25)
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References (22)
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