Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

Surface Science

Volumn 350, Issue 1-3, 1996, Pages 247-253

  Tanaka, Satoru ^a,c   Kern, R Scott ^a   Davis, Robert F ^a   Wendelken, John F ^b   Xu, Jun ^b  

^a Campus Box 7908   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Scanning tunneling microscopy; Silicon carbide; Stepped single crystal surfaces; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACES;

ADATOMS; STEP BUNCHING; STEP CONFIGURATION; STEPPED SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION; TOPOGRAPHY; VICINAL SURFACES;

THIN FILMS;

EID: 0030126915     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01105-6     Document Type: Article

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