Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

Applied Physics Letters

Volumn 68, Issue 7, 1996, Pages 955-957

  Kasu, M ^a   Makimoto, T ^a   Kobayashi, N ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344611546     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116110     Document Type: Article

References (13)

1. R. F. Davis, Proc. IEEE INS 79, 702 (1991).
2. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B AIP 10, 1237 (1992).
3. S. Yoshida, M. Sasaki, and H. Kawanishi, J. Cryst. Growth INS 136, 37 (1994).
4. H. P. Mauska and J. J. Tieijen, Appl. Phys. Lett. AIP 15, 327 (1969).
5. H. Okumura, S. Misawa, and S. Yoshida, Appl. Phys. Lett. AIP 59, 1058 (1991).
6. S. Miyoshi, K. Onabe, N. Ohkuchi, H. Yaguchi, R. Ito, S. Fukatsu, and Y. Shiraki, J. Cryst. Growth INS 124, 439 (1992).
7. T. Makimoto and N. Kobayashi, Appl. Phys. Lett. AIP 67, 548 (1995).
8. M. Mizuta, S. Fujieda, Y. Matsumoto, and T. Kawamura, Jpn. J. Appl. Phys. INS 25, L945 (1986).
9. S. Fujieda and Y. Matsumoto, Jpn. J. Appl. Phys. INS 30, L1665 (1991).
10. S. Strite, J. Ruan, Z. Li, S. Salvador, H. Chen, D. J. Smith, W. J. Choyke, and H. Morkoç, J. Vac. Sci. Technol. B AIP 9, 1924 (1991).
11. We assumed that the starting surface is the (2×4)β2 phase rather than (2×4)β, because Ref. 12 reported that the formation energy of (2×4)β2 is 0.05 eV/(1×1) lower than (2×4) and because STM observations (Ref. 13) showed (2×4)β2 as well as (2×4)β, but in either case our explanation of the mechanism shown in Fig. 3 is valid.
12. J. E. Northrup and S. Froyer, Phys. Rev. B AIP 50, 2015 (1995).
13. D. K. Biegelson et al., Phys. Rev. B 41, 5701 (1990); M. D. Pashley et al., J. Vac. Sci. Technol. B 10, 1874 (1992); V. Bressler et al., J. Vac. Sci. Technol. B 10, 1881 (1992).