Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

Applied Physics Letters

Volumn 68, Issue 7, 1996, Pages 955-957

  Kasu, M ^a   Makimoto, T ^a   Kobayashi, N ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344611546     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116110     Document Type: Article

References (13)

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11. We assumed that the starting surface is the (2×4)β2 phase rather than (2×4)β, because Ref. 12 reported that the formation energy of (2×4)β2 is 0.05 eV/(1×1) lower than (2×4) and because STM observations (Ref. 13) showed (2×4)β2 as well as (2×4)β, but in either case our explanation of the mechanism shown in Fig. 3 is valid.
12. J. E. Northrup and S. Froyer, Phys. Rev. B AIP 50, 2015 (1995).
13. D. K. Biegelson et al., Phys. Rev. B 41, 5701 (1990); M. D. Pashley et al., J. Vac. Sci. Technol. B 10, 1874 (1992); V. Bressler et al., J. Vac. Sci. Technol. B 10, 1881 (1992).