Refractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7-3.3 eV)

Applied Physics Letters

Volumn 68, Issue 4, 1996, Pages 441-443

  Vidal, M A ^a   Ramirez Flores G ^a   Navarro Contreras, H ^a   Lastras Martinez A ^a   Powell, R C ^b   Greene, J E ^b  

^a UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL STRUCTURE; ENERGY GAP; LIGHT ABSORPTION; LIGHT TRANSMISSION; MAGNESIA; MOLECULAR BEAM EPITAXY; POLYNOMIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; REFRACTIVE INDEX; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

ABSORPTION COEFFICIENT; FILM THICKNESS; GALLIUM NITRIDE; PHOTON ENERGY; REACTIVE ION MOLECULAR BEAM EPITAXY; ZINCBLENDE STRUCTURE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029754339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116406     Document Type: Article

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