Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 787-791

  Yang, Hui ^a   Brandt, Oliver ^a   Ploog, Klaus ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

GaN; Molecular beam epitaxy (MBE); Reflection high energy diffraction (RHEED)

Indexed keywords

EID: 0042215859     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666637     Document Type: Article

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