The Effects of Base Dopant Outdiffusion and Undoped Si1-xGexJunction Spacer Layers in Si/Si1_xGex /Si Heterojunction Bipolar Transistors

IEEE Electron Device Letters

Volumn 12, Issue 2, 1991, Pages 42-44

  Prinz, E J ^a   Garone, P M ^a   Schwartz, P V ^a   Xiao, X ^a   Sturm, James C ^a  

^a PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

COLLECTOR CURRENT ENHANCEMENT; DOPANT OUTDIFFUSION EFFECTS; N-P-N HBT STRUCTURE; NONABRUPT JUNCTIONS;

TRANSISTORS, BIPOLAR;

EID: 0026107387     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75698     Document Type: Article

References (8)

1. G. L. Patton et. al., “75-GHz fTSiGe-base heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 11, pp. 171-173, 1990.
2. H. Kroemer, “Heterostructure bipolar transistors and integrated circuits,” Proc. IEEE, vol. 70, no. 1, pp. 13-25, 1982.
3. C. A. King. J. L. Hoyt, and J. F. Gibbons, “Bandgap and transport properties of Si 1-x Ge x by analysis of nearly ideal Si/Si 1 _ x Ge x /Si heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2093-2104, 1989.
4. R. People and J. C. Bean, “Band alignments of coherently strained Ge x Si 1-x /Si heterostructures on & 001 & Ge y Si 1 _ y substrates,” Appl. Phys. Lett., vol. 48, no. 8, pp. 538-540, 1986.
5. D. C. D’Avanzo, M. Vanzi, and R. W. Dutton, “One-dimensional semiconductor device analysis (SEDAN),” Stanford Univ., Stanford, CA, Tech Rep. G-201-5, Oct. 1979.
6. J. F. Gibbons, C. M. Gronet, and K. E. Williams, “Limited reaction processing: Silicon epitaxy,” Appl. Phys. Lett., vol. 47, no. 7, pp. 721-723, 1985.
7. E. J. Prinz, P. M. Garone, P. V. Schwartz, X. Xiao, and J. C. Sturm, “The effect of base-emitter spacers and strain-dependent densities of states in Si/Si 1 _ x Ge x /Si heterojunction bipolar transistors,” in IEDM Tech. Dig., 1989, p. 639.
8. R. Fair. “Boron diffusion in silicon: Concentration and orientation dependence, background effects and profile estimation,” J. Electrochem. Soc., vol. 122, pp. 800-805, 1975.