Demonstration of enhanced base diffusion due to extrinsic base implantations in submicron, polysilicon-emitter, epitaxial base bipolar transistors

European Solid-State Device Research Conference

Volumn , Issue , 1995, Pages 513-516

  Denorme, S ^a   Boussetta, H ^a   Chantre, A ^a   Vincent, G ^a,b   Mouis, M ^a,c  

^a ORANGE LABS   (France)

^b UNIV GRENOBLE ALPES   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SOLID STATE DEVICES;

BASE DIFFUSION; BORON DIFFUSIONS; COLLECTOR CURRENTS; EPITAXIAL BASE; EXPERIMENTAL EVIDENCE; SUBMICRON; TEMPERATURE DEPENDENCE;

ION IMPLANTATION;

EID: 84920717113     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)