Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors

Microelectronics Journal

Volumn 26, Issue 2-3, 1995, Pages 255-259

  Mouis, M ^a   Gregory, H J ^b   Denorme, S ^a   Mathiot, D ^a   Ashburn, P ^b   Robbins, D J ^c   Glasper, J L ^c  

^a ORANGE LABS   (France)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^c DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; CRYSTALLINE MATERIALS; DIFFUSION; GATES (TRANSISTOR); ION IMPLANTATION; MODELS; SEMICONDUCTOR DOPING; TECHNOLOGY;

EMITTER; POLYSILICON; THIN BASE INTEGRATED BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0029273120     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)98927-J     Document Type: Article

References (9)

1. Ion beam enhanced diffusion of boron during Si molecular beam epitaxy
2. Integration of Si-MBE and Device Processing
3. x base
4. Damage enhanced diffusion
5. Titan, a two-dimensional process/device simulator
6. Modeling of dopant diffusion in silicon: an effective diffusivity approach including point-defects couplings
7. Performance of a CMOS compatible polysilicon bipolar transistor with high energy ion implanted collector
8. Submicron short-channel effects due to gate reoxidation induced lateral interstitial diffusion
9. The enhanced diffusion of boron in silicon after high-dose implantation and during rapid thermal annealing