-
1
-
-
21544466765
-
Gallium arsenide and other compound semiconductors on silicon,"
-
vol. 68, pp. R31-R58, 1990.
-
S.F. Fang, K. Adomi, S. lyer, H. Morkoç, H. Zabel, C. Choi, and N. Otsuka,"Gallium arsenide and other compound semiconductors on silicon," J. Appl. Phys., vol. 68, pp. R31-R58, 1990.
-
J. Appl. Phys.
-
-
Fang, S.F.1
Adomi, K.2
Lyer, S.3
Morkoç, H.4
Zabel, H.5
Choi, C.6
Otsuka, N.7
-
2
-
-
21544474791
-
Wafer fusion : A novel tech-nique for optoelectronic device fabrication and monolithic integration,"
-
vol. 56, pp. 737-739, 1990.
-
Z.L. Liau and D.E. Mull,"Wafer fusion : A novel tech-nique for optoelectronic device fabrication and monolithic integration," Appl. Phys. Lett., vol. 56, pp. 737-739, 1990.
-
Appl. Phys. Lett.
-
-
Liau, Z.L.1
Mull, D.E.2
-
3
-
-
21544450368
-
Bonding by atomic rearrangement of InP/InGaAsP 1.5 im wavelength lasers on GaAs substrates,"
-
vol. 58, pp. 1961-1963, 1991.
-
Y.H. Lo, R. Bhat, D.M. Hwang, M.A. Koza, and T.P. Lee,"Bonding by atomic rearrangement of InP/InGaAsP 1.5 (im wavelength lasers on GaAs substrates," Appl. Phys. Lett., vol. 58, pp. 1961-1963, 1991.
-
Appl. Phys. Lett.
-
-
Lo, Y.H.1
Bhat, R.2
Hwang, D.M.3
Koza, M.A.4
Lee, T.P.5
-
4
-
-
21544466248
-
Electrical characteristics of directly-bonded GaAs and InP,"
-
vol. 62, pp. 738-740, 1993.
-
H. Wada, Y. Ogawa, and T. Kamijoh,"Electrical characteristics of directly-bonded GaAs and InP," Appl. Phys. Lett., vol. 62, pp. 738-740, 1993.
-
Appl. Phys. Lett.
-
-
Wada, H.1
Ogawa, Y.2
Kamijoh, T.3
-
5
-
-
36449000918
-
Double-fused l.52-pm verticalcavity lasers,"
-
vol. 66, pp. 1030-1032, 1995.
-
D.I. Babic, J.J. Dudley, K. Streubel, R.P. Mirin, J.E. Bowers, and E.L. Hu,"Double-fused l.52-pm verticalcavity lasers," Appl. Phys. Lett., vol. 66, pp. 1030-1032, 1995.
-
Appl. Phys. Lett.
-
-
Babic, D.I.1
Dudley, J.J.2
Streubel, K.3
Mirin, R.P.4
Bowers, J.E.5
Hu, E.L.6
-
6
-
-
0027911766
-
Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,"
-
vol. 62, pp. 1038-1040, 1993.
-
Y.H. Lo, R. Bhat, D.M. Hwang, C. Chua, and C.-H. Lin,"Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement," Appl. Phys. Lett., vol. 62, pp. 1038-1040, 1993.
-
Appl. Phys. Lett.
-
-
Lo, Y.H.1
Bhat, R.2
Hwang, D.M.3
Chua, C.4
Lin, C.-H.5
-
7
-
-
0028509792
-
Effects of heat treatment on bonding properties in InP-to-Si direct wafer bonding,"
-
vol. 33, pp. 4878-4879, 1994.
-
H. Wada and T. Kamijoh,"Effects of heat treatment on bonding properties in InP-to-Si direct wafer bonding," Jpn. J. Appl. Phys., vol. 33, pp. 4878-4879, 1994.
-
Jpn. J. Appl. Phys.
-
-
Wada, H.1
Kamijoh, T.2
-
8
-
-
0029254731
-
Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding,"
-
vol. 31, pp. 284285, 1995.
-
K. Mori, K. Tokutome, and S. Sugou,"Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding," Electron. Lett., vol. 31, pp. 284285, 1995.
-
Electron. Lett.
-
-
Mori, K.1
Tokutome, K.2
Sugou, S.3
-
9
-
-
0029511778
-
High-performance InGaAs photodetectors on Si and GaAs substrates,"
-
vol. 67, pp. 3936-3938, 1995.
-
F.E. Ejeckam, C.L. Chua, Z.H. Zhu, Y.H. Lo, M. Hong, and R. Bhat,"High-performance InGaAs photodetectors on Si and GaAs substrates," Appl. Phys. Lett., vol. 67, pp. 3936-3938, 1995.
-
Appl. Phys. Lett.
-
-
Ejeckam, F.E.1
Chua, C.L.2
Zhu, Z.H.3
Lo, Y.H.4
Hong, M.5
Bhat, R.6
-
10
-
-
0030087106
-
Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding,"
-
vol. 8, pp. 173-175, 1996.
-
H. Wada and T. Kamijoh,"Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding," IEEE Photon. Technol. Lett., vol. 8, pp. 173-175, 1996.
-
IEEE Photon. Technol. Lett.
-
-
Wada, H.1
Kamijoh, T.2
-
11
-
-
0027685573
-
Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,"
-
vol. 29, pp. 1942-1944, 1993.
-
L. Gordon, G.L. Woods, R.C. Eckardt, R.R. Route, R.S. Feigelson, M.M. Fejer, and R.L. Byer,"Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser," Electron. Lett., vol. 29, pp. 1942-1944, 1993.
-
Electron. Lett.
-
-
Gordon, L.1
Woods, G.L.2
Eckardt, R.C.3
Route, R.R.4
Feigelson, R.S.5
Fejer, M.M.6
Byer, R.L.7
-
12
-
-
0029324583
-
Quasiphase-matched second-harmonic generation in AlGaAs waveguides with periodic domain inversion achieved by wafer-bonding,"
-
vol. 66, pp. 3410-3412, 1995.
-
S.J. B. Yoo, R. Bhat, C. Caneau, and M.A. Koza,"Quasiphase-matched second-harmonic generation in AlGaAs waveguides with periodic domain inversion achieved by wafer-bonding," Appl. Phys. Lett., vol. 66, pp. 3410-3412, 1995.
-
Appl. Phys. Lett.
-
-
Yoo, S.J.B.1
Bhat, R.2
Caneau, C.3
Koza, M.A.4
-
13
-
-
36449006172
-
Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 μm wavelength lasers on GaAs substrates,"
-
vol. 66, pp. 451-453, 1995.
-
Y. Okuno, K. Uomi, M. Aoki, T. Taniwatari, M. Suzuki, and M. Kondow,"Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 μm wavelength lasers on GaAs substrates," Appl. Phys. Lett., vol. 66, pp. 451-453, 1995.
-
Appl. Phys. Lett.
-
-
Okuno, Y.1
Uomi, K.2
Aoki, M.3
Taniwatari, T.4
Suzuki, M.5
Kondow, M.6
-
14
-
-
0029638651
-
Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration),"
-
vol. 67, pp. 810-812, 1995.
-
Y. Okuno, M. Aoki, T. Tsuchiya, and K. Uomi,"Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)," Appl. Phys. Lett., vol. 67, pp. 810-812, 1995.
-
Appl. Phys. Lett.
-
-
Okuno, Y.1
Aoki, M.2
Tsuchiya, T.3
Uomi, K.4
-
15
-
-
85027128859
-
Physics of Semiconductor Devices,"
-
S.M. Sze,"Physics of Semiconductor Devices," 2nd ed., Wiley, New York, 1981.
-
2nd Ed., Wiley, New York, 1981.
-
-
Sze, S.M.1
-
17
-
-
0000869164
-
Electronic surface properties of UHV-cleaved III-V compounds,"
-
vol. 62, pp. 472-486, 1977.
-
A. Huijser, J. Van Laar, and T.L. Van Rooy,"Electronic surface properties of UHV-cleaved III-V compounds," Surface Sci., vol. 62, pp. 472-486, 1977.
-
Surface Sci.
-
-
Huijser, A.1
Van Laar, J.2
Van Rooy, T.L.3
-
18
-
-
0029196486
-
High-power and wide-temperature-range operations of InGaAsP-InP strained MQW lasers with reversemesa ridge-waveguide structure,"
-
vol. 7, pp. 13-15, 1995.
-
M. Aoki, T. Tsuchiya, K. Nakahara, M. Komori, and K. Uomi,"High-power and wide-temperature-range operations of InGaAsP-InP strained MQW lasers with reversemesa ridge-waveguide structure," IEEE Photon. Technol. Lett., vol. 7, pp. 13-15, 1995.
-
IEEE Photon. Technol. Lett.
-
-
Aoki, M.1
Tsuchiya, T.2
Nakahara, K.3
Komori, M.4
Uomi, K.5
-
19
-
-
0029251795
-
Misfit and threading disloca-tions in GaAs on vicinal (110) Si,"
-
vol. 147, pp. 274-282, 1995.
-
M. Tamura and T. Yodo,"Misfit and threading disloca-tions in GaAs on vicinal (110) Si," J. Cryst. Growth, vol. 147, pp. 274-282, 1995.
-
J. Cryst. Growth
-
-
Tamura, M.1
Yodo, T.2
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