SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 33, Issue 9 R, 1994, Pages 4878-4879

Effects of heat treatment on bonding properties in inp-to-si direct wafer bonding

(2) Wada, Hiroshi a Kamijoh, Takeshi a

a OKI ELECTRIC INDUSTRY CO (Japan)

Author keywords

Bonding strength; Direct wafer bonding; Electrical contact; Heat treatment; InP on Si; Photoluminescence intensity

Indexed keywords

BONDING; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONTACTS; HEAT TREATMENT; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON;

BONDING STRENGTH; DIRECT WAFER BONDING; PHOTOLUMINESCENCE INTENSITY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0028509792 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.33.4878 Document Type: Article

Times cited : (40)

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