Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding

Electronics Letters

Volumn 31, Issue 4, 1995, Pages 284-285

  Mori, K ^a   Tokutome, K ^a   Sugou, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells; Wafer bonding

Indexed keywords

BONDING; INTEGRATED OPTOELECTRONICS; LASER PULSES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DIRECT BONDING; LONG WAVELENGTH LASERS; LOW THRESHOLD PULSED OPERATIONS; WAFER BONDING;

SEMICONDUCTOR LASERS;

EID: 0029254731     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950179     Document Type: Article

References (6)

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3. LO, H.Y., BHAT, R., HWANG, M.D., KOZA, A.M., and LEE, P.T.: ‘Bonding by atomic rearrangement of InP/InGaAsP 1.5'm wavelength lasers on GaAs substrates', Appl. Phys. Lett., 1991, 58, pp. 1961-1963
4. WADA, H., OGAWA, Y., and KAMIJOH, T.: ‘Electrical characteristics of directly-bonded GaAs and InP’, Appl. Phys. Lett., 1993, 62. pp. 738-740
5. LO, H.Y., BHAT, R., HWANG, M.D., CHUA, C., and LIN. H.C.: ‘Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement’. Appl. Phys. Lett., 1993, 62, pp. 1038-1040
6. MORI, K., TOKUTOME, K., NISHI, K., and SUGOU, S.: ‘High-quality InGaAs/InP multiple-quantum-well structures on Si fabricated by direct bonding’, Electron. Lett., 1994, 30, pp. 1008-1009