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Volumn 67, Issue , 1995, Pages 810-
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Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)
a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
BONDING;
CURRENT VOLTAGE CHARACTERISTICS;
FABRICATION;
INTEGRATED OPTOELECTRONICS;
INTERFACES (MATERIALS);
MONOLITHIC INTEGRATED CIRCUITS;
OPTICAL PROPERTIES;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR QUANTUM WELLS;
ANTIPHASE DIRECT BONDING;
DANGLING BONDS;
FREE ORIENTATION INTEGRATION;
IN PHASE DIRECT BONDING;
LIGHT CURRENT CHARACTERISTICS;
SEMICONDUCTOR LASERS;
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EID: 0029638651
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.115451 Document Type: Article |
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Times cited : (23)
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References (0)
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