Misfit and threading dislocations in GaAs on vicinal (110) Si

Journal of Crystal Growth

Volumn 147, Issue 3-4, 1995, Pages 274-282

  Tamura, M ^a   Yodo, T ^a  

^a Optoelectronics Technology Research Laboratory   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

MISFIT DISLOCATION; THERMAL ANNEALING; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPE;

DISLOCATIONS (CRYSTALS);

EID: 0029251795     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)00829-9     Document Type: Article

References (17)

1. Properties of GaAs on Si grown by molecular beam epitaxy
2. Initial Growth Mechanism of GaAs on Si(110)
3. Realization of low facet density and the growth mechanism of GaAs on GaAs(110) by migration-enhanced epitaxy
4. Misfit dislocations and antiphase domain boundaries in GaAs/Si interface