High-Power and Wide-Temperature-Range Operations of InGaAsP-InP Strained MQW Lasers with Reverse-Mesa Ridge-Waveguide Structure

IEEE Photonics Technology Letters

Volumn 7, Issue 1, 1995, Pages 13-15

  Aoki, Masahiro ^a   Tsuchiya, Tomonobu ^a   Nakahara, Kouji ^a   Komori, Masaaki ^a   Uomi, Kazuhisa ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC LOSSES; ELECTRIC RESISTANCE; HETEROJUNCTIONS; HIGH POWER LASERS; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; WAVEGUIDES;

HIGH EFFICIENCY OPERATION; INJECTED CURRENT; REVERSE MESA RIDGE WAVEGUIDE STRUCTURES; RIDGE WAVEGUIDE LASERS; STRAINED MULTIPLE QUANTUM WELL LASERS; THRESHOLD CURRENTS; WIDE TEMPERATURE RANGE OPERATIONS;

QUANTUM WELL LASERS;

EID: 0029196486     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.363391     Document Type: Article

References (6)

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