Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates

Applied Physics Letters

Volumn 58, Issue 18, 1991, Pages 1961-1963

  Lo, Y H ^a   Bhat, R ^a   Hwang, D M ^a   Koza, M A ^a   Lee, T P ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

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EID: 21544450368     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.105032     Document Type: Article

References (9)