1-D model of current distribution and resistance changes for electromigration in layered lines

IEEE Transactions on Electron Devices

Volumn 44, Issue 5, 1997, Pages 744-750

  Grosjean, David E ^a   Okabayashi, Hidekazu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC RESISTANCE; ELECTROMIGRATION; MATHEMATICAL MODELS; REFRACTORY METALS;

CONTACT RESISTANCE;

INTEGRATED CIRCUITS;

EID: 0031139356     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568035     Document Type: Article

References (14)

1. C.-C. Lee, E. S. Machlin, and H. Rathore, Roles of Ti-intermetallic compound layers on the electromigration resistance of Al-Cu interconnecting stripes, J. Appl. Phys., vol. 71, no. 12, pp. 5877-5887, 1992.
2. C.-K. Hu, P. S. Ho, and M. B. Small, Electromigration in two-level interconnect structures with Al alloy lines and W studs, J. Appl. Phys., vol. 72, no. 1, pp. 291-293, 1992.
3. R. G. Filippi, G. A. Biery, and R. A. Wachnik, The electromigration short-length effect in Ti-AlCu-Ti metallization with tungsten studs, J. Appl. Phys., vol. 78, no. 6, pp. 3756-3768, 1995.
4. C.-K. Hu, K. P. Rodbell, T. D. Sullivan, K. Y. Lee, and D. P. Bouldin, Electromigration and stress-induced voiding in fine Al and Al-alloy thin-film lines, IBM J. Res. Develop., vol. 39, no. 4, pp. 465-497, 1995.
5. H. Onoda, M. Kageyama, Y. Tatara, and Y. Fukuda, Analysis of electromigration-induced failures in multilayered interconnects, IEEE Trans. Electron Devices, vol. 40, pp. 1614-1620, Sept. 1993.
6. S. Kondo, K. Ogasawara, and K. Hinode, Thermographie analysis of electromigration phenomena in aluminum metallization, J. Appl. Phys., vol. 79, no. 2, pp. 736-741, 1996.
7. J. Tao, N. W. Cheung, and C. Hu, Modeling electromigration failures in TiN/Al-alloy/TiN interconnects and TiN thin films, in Proc. 1995 Int. Reliab. Phys. Symp., Las Vegas, NV, 1995, pp. 371-377.
8. H. Okabayashi, M. Komatsu, and H. Mori, Depth-resolved in situ TEM observation of electromigration in a submicron-wide layered Al-0.5%Cu line, Jpn. J. Appl. Phys., vol. 35, pt. 1, no. 2B, pp. 1102-1106, 1996.
9. H. Okabayashi, H. Kitamura, M. Komatsu, and H. Mori, Behavior of electromigration-induced gaps in a layered Al line observed by in situ sideview transmission electron microscopy, Appl. Phys. Lett., vol. 68, no. 8, pp. 1066-1068, 1996.
10. H. Kawasaki, C. Lee, and T.-K. Yu, Realistic electromigration lifetime projection of VLSI interconnects, Thin Solid Films, vol. 253, pp. 508-512, 1994.
11. H. H. Berger, Models for contacts to planar devices, Solid-State Electron, vol. 15, no. 2A, pp. 145-158, 1972.
12. H. S. Rathore, R. G. Filippi, R. A. Wachnik, J. J. Estabil, and T. Kwok, Electromigration reliability of AlCu interconnects with W studs, in AIP Conf. Proc. 305, 2nd Int. Workshop Stress-Induced Phenomena in Metallization, Mar. 1993, pp. 165-178.
13. C.-K. Hu, R. Rosenberg, and K. N. Tu, Stages of damage formation by electromigration in line/stud structures, in AIP Conf. Proc. 305, 2nd Int. Workshop Stress-Induced Phenomena in Metallization, Mar. 1993, pp. 195-210.
14. C.-K. Hu, Electromigration failure mechanisms in bamboo-grained Al(Cu) interconnections, Thin Solid Films, vol. 260, pp. 124-134, 1995.