Electromigration failure mechanisms in bamboo-grained Al(Cu) interconnections

Thin Solid Films

Volumn 260, Issue 1, 1995, Pages 124-134

  Hu, C K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Aluminium; Diffusion; Electromigration; Grain boundary

Indexed keywords

DRIFT VELOCITY; EDGE DISPLACEMENT; ELECTROMIGRATION FAILURE MECHANISMS; INTERCONNECTIONS; JUNCTION STRUCTURES; SEQUENTIAL DISSOLUTION; STEADY STATE;

ACTIVATION ENERGY; ALUMINUM; CURRENT DENSITY; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; GRAIN BOUNDARIES; INTERFACES (MATERIALS); PRECIPITATION (CHEMICAL); SILICON; THERMAL EFFECTS; TUNGSTEN; VELOCITY MEASUREMENT;

ELECTROMIGRATION;

EID: 0029308107     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(94)06484-9     Document Type: Article

References (38)

1. Electromigration in Al/W and Al(Cu)/W Interconnect Structures
2. Investigation of excimer laser ablation of ceramic and thin film Y-Ba-Cu-O using nanosecond photoacoustic techniques
3. Bulk electromigration reliability tests of large-grained aluminum lines with regard to semiconductor contacts
4. Dry etching of TiN/Al(Cu)/Si for very large scale integrated local interconnections
5. Reduction of Electromigration in Aluminum Films by Copper Doping
6. Inhibition of Electromigration Damage in Thin Films
7. Electromigration in Bicrystal Al Lines
8. The catastrophic phase of electromigration: surface diffusion, island formation, and film thinning
9. Copper electromigration in aluminum