메뉴 건너뛰기




Volumn 40, Issue 9, 1993, Pages 1614-1620

Analysis of Electromigration-Induced Failures in Multilayered Interconnects

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; ELECTRONICS PACKAGING; SEMICONDUCTING ALUMINUM COMPOUNDS; TITANIUM COMPOUNDS;

EID: 0027656906     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.231566     Document Type: Article
Times cited : (11)

References (13)
  • 1
    • 0024639662 scopus 로고
    • Improved photoresist over reflective topographies using titanium oxynitride antireflection coatings
    • T.R. Pawpalone, M. Camacho, B. Lee, and E.C. Douglas, “Improved photoresist over reflective topographies using titanium oxynitride antireflection coatings,” J. Electrochem. Soc, vol. 136, no. 4, pp. 1181–1185, 1989.
    • (1989) J. Electrochem. Soc , vol.136 , Issue.4 , pp. 1181-1185
    • Pawpalone, T.R.1    Camacho, M.2    Lee, B.3    Douglas, E.C.4
  • 2
    • 0025627149 scopus 로고
    • Improvement of electromigration resistance of layered aluminum conductors
    • K. Hinode and Y. Homma, “Improvement of electromigration resistance of layered aluminum conductors,” in Proc. 28th Int. Reliability Physics Symp., 1990, pp. 25–30.
    • (1990) Proc. 28th Int. Reliability Physics Symp. , pp. 25-30
    • Hinode, K.1    Homma, Y.2
  • 4
    • 0023846816 scopus 로고
    • Effects of annealing temperature on electromigration performance of multilayer metallization systems
    • H.H. Hoang, “Effects of annealing temperature on electromigration performance of multilayer metallization systems,” in Proc. 26th Int. Reliability Physics Symp., 1988, pp. 173–178.
    • (1988) Proc. 26th Int. Reliability Physics Symp. , pp. 173-178
    • Hoang, H.H.1
  • 6
    • 0026142234 scopus 로고
    • Formation of texture controlled aluminum and its migration performance in Al-Si/TiN stacked structure
    • M. Kageyama, K. Hashimoto, and H. Onoda, “Formation of texture controlled aluminum and its migration performance in Al-Si/TiN stacked structure,” in Proc. 29th Int. Reliability Physics Symp., 1991, pp. 97–102.
    • (1991) Proc. 29th Int. Reliability Physics Symp. , pp. 97-102
    • Kageyama, M.1    Hashimoto, K.2    Onoda, H.3
  • 7
    • 0026963582 scopus 로고
    • Influence of interface structure between overlayer TiN and Al on multilayered interconnects
    • submitted to Japan. J. Appl. Phys.
    • M. Kageyama, Y. Tatara, and H. Onoda, “Influence of interface structure between overlayer TiN and Al on multilayered interconnects,” in Extended Abstracts Int. Conf. SSDM, 1992, pp. 181–183; submitted to Japan. J. Appl. Phys.
    • (1992) Extended Abstracts Int. Conf. SSDM , pp. 181-183
    • Kageyama, M.1    Tatara, Y.2    Onoda, H.3
  • 8
    • 0039138607 scopus 로고
    • Influences of overlayered-TiN/Al electrical contact resistance on electromigration in multilayered interconnects
    • Conf. Proc. Mat. Res. Soc, Tempe, AZ 1992
    • H. Onoda, M. Kageyama, Y. Tatara, Y. Harada, A. Nakamura, and Y. Fukuda, “Influences of overlayered-TiN/Al electrical contact resistance on electromigration in multilayered interconnects,” in Advanced Metallization VLSI Appl., 1992, Conf. Proc. Mat. Res. Soc, Tempe, AZ 1992, pp. 19–24.
    • (1992) Advanced Metallization VLSI Appl. , pp. 19-24
    • Onoda, H.1    Kageyama, M.2    Tatara, Y.3    Harada, Y.4    Nakamura, A.5    Fukuda, Y.6
  • 9
    • 0023434884 scopus 로고
    • Electromigration in multilayer metallization systems
    • H.H. Hoang and J.M. McDavid, “Electromigration in multilayer metallization systems,” Solid State Technol., vol. 30, no. 10, pp. 121–126, 1987.
    • (1987) Solid State Technol. , vol.30 , Issue.10 , pp. 121-126
    • Hoang, H.H.1    McDavid, J.M.2
  • 10
    • 0021304363 scopus 로고
    • Sputtered Ti-doped Al-Si for enhanced interconnect reliability
    • F. Fischer and F. Neppl, “Sputtered Ti-doped Al-Si for enhanced interconnect reliability,” in Proc. 22nd Int. Reliability Physics Symp., 1984, pp. 190–192.
    • (1984) Proc. 22nd Int. Reliability Physics Symp. , pp. 190-192
    • Fischer, F.1    Neppl, F.2
  • 12
    • 5244262290 scopus 로고
    • Al-Ti and Al-Ti-Si thin alloy films
    • A.G. Dirks, T. Tien, and J.M. Towner, “Al-Ti and Al-Ti-Si thin alloy films,” J. Appl. Phys., vol. 59, no. 6, pp. 2010–2014, 1986.
    • (1986) J. Appl. Phys. , vol.59 , Issue.6 , pp. 2010-2014
    • Dirks, A.G.1    Tien, T.2    Towner, J.M.3
  • 13
    • 0024868013 scopus 로고
    • Effects for copper and titanium addition to aluminum interconnects on electro and stress-migration open circuit failures
    • T. Hosoda, H. Yagi, and H. Tsuchikawa, “Effects for copper and titanium addition to aluminum interconnects on electro and stress-migration open circuit failures,” in Proc. 27th Int. Reliability Physics Symp., 1989, pp. 202–206.
    • (1989) Proc. 27th Int. Reliability Physics Symp. , pp. 202-206
    • Hosoda, T.1    Yagi, H.2    Tsuchikawa, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.