Behavior of electromigration-induced gaps in a layered Al line observed by in situ sideview transmission electron microscopy

Applied Physics Letters

Volumn 68, Issue 8, 1996, Pages 1066-1068

  Okabayashi, H ^a   Kitamura, H ^a   Komatsu, M ^b   Mori, H ^b  

^a NEC CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; EFFECTS; ELECTRONS; MASS TRANSFER; OSCILLATIONS; SURFACES; TITANIUM; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; VELOCITY MEASUREMENT;

DRIFT VELOCITY; ELECTROMIGRATION INDUCED GAPS; ELECTRON FLOW; SHUNTS; SIDEVIEW TRANSMISSION ELECTRON MICROSCOPY;

ELECTROMIGRATION;

EID: 0030087418     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115714     Document Type: Article

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