Depth-resolved in-situ TEM observation of electromigration in a submicron-wide layered Al-0.5%Cu line

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1102-1106

  Okabayashi, Hidekazu ^a   Komatsu, Masao ^b   Mori, Hirotaro ^b  

^a NEC CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Aluminum; Electromigration; Integrated circuit; Interconnection; Reliability; Transmission electron microscopy

Indexed keywords

ALUMINUM; ANODES; CATHODES; GRAIN BOUNDARIES; INTEGRATED CIRCUITS; RELIABILITY; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

DRIFT VELOCITY MEASUREMENT STRUCTURE; ELECTRON FLOW; SIDE VIEW TRANSMISSION ELECTRON MICROSCOPY; VOIDING;

ELECTROMIGRATION;

EID: 0030080484     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1102     Document Type: Article

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