Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 188-194

  Shoji, Hajime ^b   Nakata, Yoshiaki ^b   Mukai, Kohki ^b   Sugiyama, Yoshihiro ^b   Sugawara, Mitsuru ^b   Yokoyama, Naoki ^b   Ishikawa, Hiroshi ^a,b  

^a IEEE

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Crystal growth; Lasers; Measurement; Physics; Quantum well devices; Semiconductor lasers; Stimulated emission

Indexed keywords

CHARGE CARRIERS; CONTINUOUS WAVE LASERS; CRYSTAL GROWTH; LIGHT EMISSION; QUANTUM EFFICIENCY; REFLECTIVE COATINGS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

STIMULATED EMISSION; THERMAL EXCITATION;

SEMICONDUCTOR LASERS;

EID: 0031109089     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605654     Document Type: Article

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