Controlled quantum confinement potentials in self-formed InGaAs quantum dots grown by atomic layer epitaxy technique

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 2 B, 1996, Pages

  Mukai, Kohki ^a   Ohtsuka, Nobuyuki ^a   Sugawara, Mitsuru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLABILITY; EPITAXIAL GROWTH; MAGNETIC FIELDS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER EPITAXY; CONFINEMENT POTENTIAL; DIAMAGNETIC SHIFTS; QUANTUM CONFINEMENT; SIZE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030086826     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.L262     Document Type: Article

References (12)