Optical gain for wurtzite GaN with anisotropic strain in c plane

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 450-455

  Domen, K ^a   Horino, K ^a   Kuramata, A ^a   Tanahashi, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

GaN; Optical gain; Strain; Valence band structure

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRONIC DENSITY OF STATES; STRAIN;

GALLIUM NITRIDE; OPTICAL GAIN;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031108487     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605692     Document Type: Article

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