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Volumn 35, Issue 5 B, 1996, Pages
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Tight-binding analysis of the optical matrix element in wurtzite- and zincblende-GaN quantum wells
a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
BINDING ENERGY;
ELECTRON ENERGY LEVELS;
ELECTRON TRANSITIONS;
LATTICE CONSTANTS;
LIGHT EMITTING DIODES;
MATHEMATICAL MODELS;
OPTICAL PROPERTIES;
POLARIZATION;
SEMICONDUCTING GALLIUM COMPOUNDS;
ZINC COMPOUNDS;
CONDUCTION LIGHT HOLE TRANSITION;
CRYSTAL FIELD SPLITTING;
FEYNMAN-HELLMANN THEOREM;
OPTICAL MATRIX ELEMENT;
SPIN ORBIT INTERACTION;
TIGHT BONDING ANALYSIS;
TIGHT BONDING MODEL;
WAVE NUMBER;
WURTZITE;
ZINCBLENDE;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0030148106
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.l599 Document Type: Article |
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Times cited : (21)
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References (17)
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